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S29GL128P11FFIV10
  • S29GL128P11FFIV10

S29GL128P11FFIV10

The S29GL128P11FFIV10 is a 128 Mbit, 3.0 V page-mode Flash memory device using 90 nm MirrorBit technology. It features uniform 128 Kbyte sectors, VersatileIO control for I/O voltage from 1.65 V to VCC, and fast random access times down to 90 ns. With a 32-word write buffer, advanced sector protection, and a secured silicon sector for permanent data, it supports up to 100,000 erase cycles per sector. Designed for embedded applications requiring high density and reliability.

Infineon Technologies S29GL128P11FFIV10 Product Info

16 April 2026 1

Parameters

Density

128 MBit

Family

GL-P

Initial Access Time

110 ns

Interface Frequency (SDR/DDR) (MHz)

NA

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Page Access Time

25 ns

Peak Reflow Temp

260 °C

Qualification

Industrial

Features

  • 90 nm MirrorBit process technology
  • Single 3 V read/program/erase operation
  • VersatileIO control (1.65 V to VCC I/O)
  • 32-word/64-byte write buffer
  • 8-word/16-byte page read buffer
  • Uniform 64 Kword/128 Kbyte sectors
  • 128-word/256-byte Secured Silicon Sector
  • Advanced sector protection methods
  • Program/Erase Suspend and Resume
  • Hardware data protection (WP#/ACC, VCC)
  • Write pulse glitch protection
  • 100,000 erase cycles per sector (typical)

Description

  • High density for embedded storage needs
  • Low voltage reduces power consumption
  • Flexible I/O for easy system integration
  • Fast programming with write buffer
  • Page read buffer speeds up data access
  • Simplifies memory management
  • Secure area for permanent IDs
  • Protects data from accidental changes
  • Suspend/resume boosts system efficiency
  • Hardware protection prevents data loss
  • Glitch protection ensures data integrity
  • High endurance for long device life

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