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CYRS2645KV18-250GCMB
  • CYRS2645KV18-250GCMB

CYRS2645KV18-250GCMB

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Infineon’s 144Mb Quad Data Rate (QDR®)-II+, CYRS164x and CYRS264x series, are high performance, synchronous pipelined SRAMs designed with Infineon’s RADSTOP™ technology.  The 144Mb QDR®-II+ memories are available in x18/x36 and two-word/four-word data bus configurations, and optional on-die termination (ODT).  Our QDR®-II+ provides low latency and random memory access capability ideal for high speed cache applications. Infineon’s radiation hardened memories are QML-V certified, meeting the reliability and lifecycle demands of extreme environments. Our RADSTOPTM memory solutions enhance overall system computing limits while providing Size, Weight, and Power (SWaP) benefits and greater design flexibility. Infineon’s state-of-the art RADSTOP™ technology is radiation hardened through proprietary design and process hardening techniques. NOTE:  this part is superseded by 5962R1821502VXF

Infineon Technologies CYRS2645KV18-250GCMB Product Info

16 April 2026 0

Parameters

Architecture

QDR-II+, ODT

Bank Switching

N

Burst Length (Words)

4

Data Width

x 36

Density

144 MBit

Device weight

6152.8 mg

ECC

N

Family

QDR-II+, ODT

Frequency

250 MHz

Interfaces

Parallel

Lead Ball Finish

Sn/Pb

On-Die Termination

Y

Operating Temperature range

-55 °C to 125 °C

Operating Voltage range

1.7 V to 1.9 V

Organization (X x Y)

4Mb x 36

Peak Reflow Temp

220 °C

Planned to be available until at least

2033

Qualification

Military

Read Latency (Cycles)

2

Features

  • 144Mb density,4Mx36 four-word burst mode
  • 250MHz > freq. / 36 Gbps throughput
  • Two independent unidirectional data port
  • Double Data Rate (DDR) port
  • Output impedance matching input
  • Memory core bit-interleaving
  • On-die termination (ODT)
  • 1.7 V to 1.9 V operating voltage range
  • –55°C to +125°C military temp. grade
  • 165-ball ceramic CGA (CCGA)
  • Flight devices, order 5962R1821502VXF

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