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S29GL032N90TFI040
  • S29GL032N90TFI040

S29GL032N90TFI040

The S29GL032N90TFI040 is a 32 Mbit page-mode Flash memory manufactured with 110 nm MirrorBit® technology, offering single 3.0 V supply and access times up to 90 ns. It features a flexible x8/x16 data bus, advanced sector protection with persistent and password modes, and a secured silicon sector for permanent storage. Typical standby current is 1 µA, with industrial temperature range from -40°C to +85°C and VCC from 2.7 V to 3.6 V.

Infineon Technologies S29GL032N90TFI040 Product Info

16 April 2026 1

Parameters

Density

32 MBit

Family

GL-N

Initial Access Time

90 ns

Interface Frequency (SDR/DDR) (MHz)

NA

Interfaces

Parallel

Lead Ball Finish

Matte Tin Plating

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Page Access Time

25 ns

Peak Reflow Temp

260 °C

Features

  • 3 V single power supply operation
  • 16-bit data bus, byte/word selectable
  • 8-word/16-byte page read buffer
  • 16-word/32-byte write buffer
  • Unlock Bypass mode for fast programming
  • Accelerated program via WP#/ACC pin
  • Advanced sector protection:
  • Secured Silicon Sector for code/data
  • 100,000 erase cycles per sector
  • 20-year data retention
  • Low power: 1 µA standby, 1 mA page read
  • JEDEC and CFI command set compatible

Description

  • Simplifies power design with single 3 V
  • Flexible interface for 8/16-bit systems
  • Fast random access with page read buffer
  • Quick multi-word updates reduce downtime
  • Faster programming boosts throughput
  • High security for code/data storage
  • Multiple protection modes prevent data loss
  • Reliable with high endurance and retention
  • Low power extends battery/system life
  • Easy integration with JEDEC, CFI standards

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