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S25FL128SAGBHB200
  • S25FL128SAGBHB200

S25FL128SAGBHB200

Active and preferred

The S25FL128SAGBHB200 is a 128 Mb (16 MB) SPI Multi-I/O NOR flash memory using 65-nm MIRRORBIT™ technology and Eclipse architecture for high-speed operation. It supports single, dual, and quad SPI modes, including DDR, with read speeds up to 52 MBps (Quad, 104 MHz) and DDR up to 80 MBps. Operating from 2.7 V to 3.6 V core and 1.65 V to 3.6 V I/O, it offers advanced sector protection, 100,000 program-erase cycles, and 20-year data retention.

Infineon Technologies S25FL128SAGBHB200 Product Info

16 April 2026 0

Parameters

Classification

ISO 26262-ready

Density

128 MBit

Family

FL-S

Interface Bandwidth

52 MByte/s

Interface Frequency (SDR/DDR) (MHz)

133 / -

Interfaces

Quad SPI

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Automotive

Apps

Automotive body electronics & power distribution, Door control module, Automotive instrument cluster, Connected and smart LED lighting for IoT

Features

  • MIRRORBIT™ technology stores 2 bits per cell
  • Eclipse architecture for fast program/erase
  • SPI Multi-I/O: x1, x2, x4 data width support
  • SDR and DDR read modes up to 80 MBps
  • Page programming buffer: 256B/512B options
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles minimum
  • 20-year data retention minimum
  • 1024-byte One-Time Programmable (OTP) area
  • Advanced sector and block protection features
  • Versatile I/O voltage range: 1.65 V to VCC
  • Operating temp: –40°C to +125°C

Description

  • High density, reliable code and data storage
  • Fast erase/program boosts system performance
  • Flexible I/O supports wide host compatibility
  • High-speed read enables XIP applications
  • Efficient page buffer speeds up programming
  • Multiple erase options ease legacy migration
  • Long endurance reduces maintenance needs
  • Data retention ensures long-term reliability
  • OTP region enhances system security
  • Robust protection prevents data corruption
  • Wide voltage range fits diverse systems
  • Broad temp range suits harsh environments

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