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S29GL01GT11FHIV43
  • S29GL01GT11FHIV43

S29GL01GT11FHIV43

Active and preferred

The S29GL01GT11FHIV43 is a 1 Gb (128 MB) parallel NOR flash memory using 45-nm MIRRORBIT™ technology for embedded systems needing fast access and reliability. It operates from a single 2.7 V to 3.6 V supply, supports I/O voltages from 1.65 V to VCC, and offers ×8/×16 data bus. Maximum random access time is 120 ns, page access time is 15 ns, and buffer programming reaches 1.14 MBps. Uniform 128 KB sectors ensure robust performance.

Infineon Technologies S29GL01GT11FHIV43 Product Info

16 April 2026 0

Parameters

Density

1 GBit

Family

GL-T

Initial Access Time

100 ns

Interface Frequency (SDR/DDR) (MHz)

-

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Page Access Time

25 ns

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • 45-nm MIRRORBIT™ technology
  • Single supply for read/program/erase
  • Versatile I/O voltage (1.65 V to VCC)
  • ×8/×16 data bus
  • 512-byte programming buffer
  • Hardware ECC with single bit correction
  • Uniform 128-KB sectors
  • Advanced sector protection (ASP)
  • 100,000 program/erase cycles per sector
  • 20-year data retention (typical)
  • Power-up and low VCC write inhibit
  • Status Register, Data Polling, Ready/Busy pin

Description

  • High density for embedded applications
  • Flexible I/O supports various host systems
  • Fast programming with 512-byte buffer
  • Reliable data with built-in ECC
  • Simplifies memory management with uniform
  • Enhanced data security with ASP
  • Long device lifetime, 100K cycles per sector
  • Retains data up to 20 years
  • Prevents accidental writes during power
  • Easy status monitoring and diagnostics

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