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S27KS0642GABHB023
  • S27KS0642GABHB023

S27KS0642GABHB023

Active and preferred

S27KS0642GABHB023 is a 64 Mb HYPERRAM™ self-refresh DRAM (PSRAM) using the HYPERBUS™ DDR interface for high-bandwidth external memory expansion. It supports 1.8 V operation (VCC/VCCQ 1.7 V to 2.0 V), up to 200 MHz clock and 400 MBps throughput, with 35 ns max access time. It integrates RESET#, RWDS, a 24-ball 5×5 FBGA, wrapped and linear burst, and hybrid sleep and deep power-down.

Infineon Technologies S27KS0642GABHB023 Product Info

16 April 2026 0

Parameters

Density

64 MBit

Family

KS-2

Initial Access Time

35 ns

Interface Bandwidth

400 MByte/s

Interface Frequency (SDR/DDR) (MHz)

- / 200

Interfaces

HYPERBUS

Lead Ball Finish

N/A

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

1.7 V to 2 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

See roadmap

Qualification

Automotive

Technology

HYPERRAM

Apps

Automotive head unit, Automotive instrument cluster, Automotive telematics control unit (TCU)

Features

  • HYPERBUS™ interface
  • 1.8 V or 3.0 V I/O support
  • Single-ended or diff clock option
  • 8-bit DDR data bus (DQ[7:0])
  • RWDS strobe and write data mask
  • Optional DCARS read strobe
  • 200 MHz maximum clock rate
  • Up to 400 MBps data throughput
  • Max access time (tACC) 35 ns
  • Hybrid sleep retains data
  • Deep power-down stops refresh
  • ESD: 2 kV HBM, 500 V CDM

Description

  • Fast MCU memory expansion over x8
  • Works with 1.8 V or 3.0 V rails
  • Clock options ease PCB constraints
  • DDR x8 reduces routing complexity
  • RWDS improves DDR timing margins
  • DCARS widens read data eye margin
  • 200 MHz supports high bandwidth I/O
  • 400 MBps enables fast frame buffers
  • 35 ns tACC reduces access latency
  • Hybrid sleep saves power, keeps data
  • DPD minimizes power when data not needed
  • High ESD improves handling robustness

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