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S26KS128SDGBHM030
  • S26KS128SDGBHM030

S26KS128SDGBHM030

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The S26KS128SDGBHM030 is a 128 Mb automotive-grade HYPERFLASH™ memory built on 65 nm MIRRORBIT™ technology. Supporting HYPERBUS™ at 1.8 V and 3.0 V, it delivers up to 166 MHz clock rate (333 MBps) with DDR center-aligned read strobe. Operating from -40°C to +125°C (AEC-Q100 Grade 1), it offers 100,000 program/erase cycles, 20-year retention, ECC and CRC for data integrity, and advanced sector protection. Typical standby current is 25 µA.

Infineon Technologies S26KS128SDGBHM030 Product Info

16 April 2026 1

Parameters

Bus Width

x8

Classification

ISO 26262-ready

Density

128 MBit

Family

KS-S

Initial Access Time

96 ns

Interface Bandwidth

266 MByte/s

Interface Frequency (SDR/DDR) (MHz)

- / 133

Interfaces

HYPERBUS

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 125 °C

Operating Voltage range

1.7 V to 1.95 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Automotive

Technology

HYPERFLASH

Features

  • 8-bit data bus
  • HYPERBUS™ interface
  • Up to 333 MBps sustained read throughput
  • DDR: two data transfers per clock
  • 166 MHz clock rate at 1.8 V
  • 100 MHz clock rate at 3.0 V
  • 96 ns initial random read access time
  • Configurable burst lengths: 16/32/64 bytes
  • Low power modes: standby 25 µA, deep
  • ECC: 1-bit correction, 2-bit detection
  • Hardware CRC calculation
  • Secure silicon region (1024-byte OTP)

Description

  • Fast data access for high-performance systems
  • Flexible interface supports diverse designs
  • High-speed DDR improves throughput
  • Multiple burst lengths optimize transfers
  • Low power modes extend battery life
  • ECC ensures data integrity
  • CRC detects transmission errors
  • Secure region enables device authentication
  • Quick random access reduces latency
  • 8-bit bus simplifies integration
  • Configurable output drive for signal tuning
  • Reliable operation in harsh environments

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