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S27KS0641DPBHV020
  • S27KS0641DPBHV020

S27KS0641DPBHV020

S27KS0641DPBHV020 is a 64 Mb (8 MB) HyperRAM self-refresh DRAM with a low-signal-count interface (CS#, CK/CK#, RWDS, DQ[7:0]) for embedded external memory. It supports sequential bursts plus configurable wrapped/linear burst lengths, and runs at 166 MHz DDR at 1.8 V (333 MBps) or 100 MHz at 3.0 V (200 MBps). In a 24-ball 1.00 mm-pitch FBGA, it is rated -40 to 105°C, with 1.7 V to 1.95 V or 2.7 V to 3.6 V supply ranges.

Infineon Technologies S27KS0641DPBHV020 Product Info

16 April 2026 0

Parameters

Density

64 MBit

Family

KS-1

Initial Access Time

36 ns

Interface Bandwidth

333 MByte/s

Interface Frequency (SDR/DDR) (MHz)

- / 166

Interfaces

HYPERBUS

Lead Ball Finish

N/A

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

1.7 V to 2 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Qualification

Industrial

Technology

HYPERRAM

Features

  • HyperRAM low-signal-count interface
  • 8-bit DDR data bus (DQ[7:0])
  • 11/12 interface signals (VIO)
  • Up to 166 MHz clock at 1.8 V
  • Up to 100 MHz clock at 3.0 V
  • Up to 333 MBps peak bandwidth
  • RWDS strobe with mask function
  • Wrapped burst 16/32/64/128 bytes
  • Linear and hybrid burst options
  • Deep Power Down mode (DPD)
  • 1.7 V to 1.95 V supply range
  • 2.7 V to 3.6 V supply range

Description

  • Cuts MCU pin count vs parallel DRAM
  • DDR boosts throughput per clock
  • Simplifies routing with fewer traces
  • 166 MHz supports fast memory reads
  • 100 MHz fits 3.0 V host designs
  • 333 MBps supports rich HMI assets
  • RWDS eases timing, masks writes
  • Burst options optimize bus efficiency
  • Linear bursts fit streaming access
  • DPD reduces standby power drain
  • Wide 1.8 V supply eases power tree
  • Wide 3.0 V supply fits legacy rails

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