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S27KL0641DABHA020
  • S27KL0641DABHA020

S27KL0641DABHA020

The S27KL0641DABHA020 is a 64 Mb (8 MB) HyperRAM self-refresh DRAM for external memory expansion in embedded and automotive systems. It uses an 8-bit DDR interface (DQ[7:0] plus RWDS) with CS# and CK for low signal count, supports sequential and configurable wrapped or linear bursts, and runs up to 100 MHz (200 MBps) at 2.7 V to 3.6 V VCC/VCCQ. It is AEC-Q100 Grade 3 (-40°C to +85°C) in a 24-ball FBGA.

Infineon Technologies S27KL0641DABHA020 Product Info

16 April 2026 0

Parameters

Bus Width

x8

Density

64 MBit

Family

KL-1

Initial Access Time

40 ns

Interface Bandwidth

200 MByte/s

Interface Frequency (SDR/DDR) (MHz)

- / 100

Interfaces

HYPERBUS

Lead Ball Finish

N/A

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Technology

HYPERRAM

Features

  • HyperRAM low-signal-count interface
  • 8-bit DDR data bus (DQ[7:0])
  • 11/12 interface signals (VIO)
  • Up to 166 MHz clock at 1.8 V
  • Up to 100 MHz clock at 3.0 V
  • Up to 333 MBps peak bandwidth
  • RWDS strobe with mask function
  • Wrapped burst 16/32/64/128 bytes
  • Linear and hybrid burst options
  • Deep Power Down mode (DPD)
  • 1.7 V to 1.95 V supply range
  • 2.7 V to 3.6 V supply range

Description

  • Cuts MCU pin count vs parallel DRAM
  • DDR boosts throughput per clock
  • Simplifies routing with fewer traces
  • 166 MHz supports fast memory reads
  • 100 MHz fits 3.0 V host designs
  • 333 MBps supports rich HMI assets
  • RWDS eases timing, masks writes
  • Burst options optimize bus efficiency
  • Linear bursts fit streaming access
  • DPD reduces standby power drain
  • Wide 1.8 V supply eases power tree
  • Wide 3.0 V supply fits legacy rails

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