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S26KS256SDPBHA020
  • S26KS256SDPBHA020

S26KS256SDPBHA020

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The S26KS256SDPBHA020 is a 256 Mb (32 MB) HYPERFLASH™ NOR flash memory with an 8-bit DDR HYPERBUS™ interface, delivering up to 333 MBps read throughput at 1.8 V and 166 MHz, or 200 MBps at 3.0 V and 100 MHz. It features uniform 256 KB sectors, a 512-byte program buffer, ECC (1-bit correction, 2-bit detection), and CRC. Operating from 1.7 V to 1.95 V or 2.7 V to 3.6 V, it meets AEC-Q100 automotive grade 2 (-40°C to +105°C) in a 24-ball FBGA package.

Infineon Technologies S26KS256SDPBHA020 Product Info

16 April 2026 0

Parameters

Bus Width

x8

Classification

ISO 26262-ready

Density

256 MBit

Family

KS-S

Initial Access Time

96 ns

Interface Bandwidth

333 MByte/s

Interface Frequency (SDR/DDR) (MHz)

- / 166

Interfaces

HYPERBUS

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

1.7 V to 1.95 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Automotive

Technology

HYPERFLASH

Features

  • 3.0 V I/O with 11 bus signals
  • 1.8 V I/O with 12 bus signals
  • Up to 333 MBps sustained read throughput
  • DDR: two data transfers per clock
  • 8-bit data bus (DQ[7:0])
  • 96-ns initial random read access time
  • 512-byte program buffer
  • ECC: 1-bit correction, 2-bit detection
  • Hardware accelerated CRC calculation
  • Secure silicon region (1024-byte OTP)
  • Advanced sector protection methods
  • Low power modes: standby 25 µA, deep

Description

  • High throughput enables fast data access
  • DDR boosts system performance
  • 8-bit bus simplifies integration
  • Fast random access reduces latency
  • Large buffer speeds up programming
  • ECC ensures reliable data integrity
  • CRC detects data errors quickly
  • Secure region protects critical data
  • Flexible sector protection enhances security
  • Low power modes extend battery life

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