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S26KS128SDPBHI020
  • S26KS128SDPBHI020

S26KS128SDPBHI020

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The S26KS128SDPBHI020 is a 128 Mb (16 MB) HYPERFLASH™ memory with HYPERBUS™ interface, supporting 1.8 V and 3.0 V operation. It achieves up to 166 MHz (333 MBps) at 1.8 V and 100 MHz (200 MBps) at 3.0 V, with DDR data transfer and 96 ns initial random read access. Features include advanced sector protection, ECC, CRC, low power modes (standby 25 µA, deep power-down 8 µA), and endurance of 100,000 cycles. Operating temperature ranges from -40°C to +125°C (AEC-Q100 Grade 1).

Infineon Technologies S26KS128SDPBHI020 Product Info

16 April 2026 0

Parameters

Bus Width

x8

Density

128 MBit

Family

KS-S

Initial Access Time

96 ns

Interface Bandwidth

333 MByte/s

Interface Frequency (SDR/DDR) (MHz)

- / 166

Interfaces

HYPERBUS

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

1.7 V to 1.95 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Technology

HYPERFLASH

Features

  • 3.0 V I/O with 11 bus signals
  • 1.8 V I/O with 12 bus signals
  • Up to 333 MBps sustained read throughput
  • DDR: two data transfers per clock
  • 8-bit data bus (DQ[7:0])
  • 96-ns initial random read access time
  • 512-byte program buffer
  • ECC: 1-bit correction, 2-bit detection
  • Hardware accelerated CRC calculation
  • Secure silicon region (1024-byte OTP)
  • Advanced sector protection methods
  • Low power modes: standby 25 µA, deep

Description

  • High throughput enables fast data access
  • DDR boosts system performance
  • 8-bit bus simplifies integration
  • Fast random access reduces latency
  • Large buffer speeds up programming
  • ECC ensures reliable data integrity
  • CRC detects data errors quickly
  • Secure region protects critical data
  • Flexible sector protection enhances security
  • Low power modes extend battery life

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