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RIC7S113E4SCB
  • RIC7S113E4SCB

RIC7S113E4SCB

Active and preferred

RIC7S113E4SCB is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Packaged in a LCC CIC, it is intended for harsh radiation environments such as space, with electrical parameters specified up to 100 krad(Si) and single effect effects (SEE) characterized up to LET of 81.9 MeV·cm2/mg. This device is screened per MIL-PRF-38535 Level B.

Infineon Technologies RIC7S113E4SCB Product Info

16 April 2026 0

Parameters

Bias Supply Voltage range

5 V to 20 V

Channels

2

Configuration

High-side and low-side

Language

SPICE

Output Voltage max

20 V

OverClocking

Delay Matching 20 (ns)

Package

LCC-18

Product Category

HiRel Power ICs

SEE

81.9 MeV∙cm2/mg

Supply Voltage range

10 V to 20 V

TID max

100 Krad(Si)

Voltage Class

100 V

VS max

400 V

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