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S26KL512SDABHV023
  • S26KL512SDABHV023

S26KL512SDABHV023

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The S26KL512SDABHV023 is a 512 Mb (64 MB) HYPERFLASH™ memory with HYPERBUS™ interface, supporting 3.0 V and 1.8 V operation, up to 166 MHz clock rate, and 333 MBps sustained read throughput. Uniform 256 KB sectors, ECC, CRC, and advanced sector protection enhance reliability. Endurance is 100,000 cycles, data retention is 20 years, and automotive grades meet AEC-Q100 standards with -40°C to +125°C operation. Low-power modes and 24-ball FBGA packaging suit automotive uses.

Infineon Technologies S26KL512SDABHV023 Product Info

16 April 2026 0

Parameters

Bus Width

x8

Density

512 MBit

Family

KL-S

Initial Access Time

96 ns

Interface Bandwidth

200 MByte/s

Interface Frequency (SDR/DDR) (MHz)

- / 100

Interfaces

HYPERBUS

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Technology

HYPERFLASH

Features

  • 3.0 V I/O with 11 bus signals
  • 1.8 V I/O with 12 bus signals
  • Up to 333 MBps sustained read throughput
  • DDR: two data transfers per clock
  • 8-bit data bus (DQ[7:0])
  • 96-ns initial random read access time
  • 512-byte program buffer
  • ECC: 1-bit correction, 2-bit detection
  • Hardware accelerated CRC calculation
  • Secure silicon region (1024-byte OTP)
  • Advanced sector protection methods
  • Low power modes: standby 25 µA, deep

Description

  • High throughput enables fast data access
  • DDR boosts system performance
  • 8-bit bus simplifies integration
  • Fast random access reduces latency
  • Large buffer speeds up programming
  • ECC ensures reliable data integrity
  • CRC detects data errors quickly
  • Secure region protects critical data
  • Flexible sector protection enhances security
  • Low power modes extend battery life

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