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IRF6665
  • IRF6665

IRF6665

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon Technologies IRF6665 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.41

ID (@25°C) max

19 A

Micro-stencil

IRF66SH-25

Moisture Sensitivity Level

1

Mounting

SMD

Operating Temperature range

-40 °C to 150 °C

Package

DirectFET(S)

Polarity

N

Ptot (@ TA=25°C) max

2.2 W

Ptot max

42 W

Qgd

2.8 nC

QG (typ @10V)

8.4 nC

RDS (on) (@10V) max

62 mΩ

RthJC max

3 K/W

Tj max

150 °C

VDS max

100 V

VGS(th) range

3 V to 5 V

VGS(th)

4 V

VGS max

20 V

Features

  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • High-current rating
  • Dual-side cooling capability
  • Low package height of 0.7mm
  • Low parasitic (1-2 nH) inductance package
  • 100% lead-free (No RoHS exemption)

Description

  • Wide availability from distribution partners
  • Industry standard qualification level
  • High power density
  • Optimum thermal performance
  • Compact form factor
  • High efficiency
  • Environmentally friendly

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