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S26HS01GTFPBHI030
  • S26HS01GTFPBHI030

S26HS01GTFPBHI030

Active and preferred

The S26HS01GTFPBHI030 is a 1 Gb automotive-grade SEMPER™ NOR Flash memory using Infineon's 45-nm MIRRORBIT™ technology. Supporting HYPERBUS™ DDR (up to 400 MBps at 200 MHz) and legacy SPI, it offers ISO 26262 ASIL-B compliance, built-in ECC (SECDED), interface and data integrity CRC, and SafeBoot. Endurance Flex enables high endurance or long retention. Operating from 1.7–2.0 V, it meets AEC-Q100 Grade 1 (-40°C to 125°C) and comes in a 24-ball BGA package.

Infineon Technologies S26HS01GTFPBHI030 Product Info

16 April 2026 1

Parameters

Density

1 GBit

Family

HS-T

Interface Bandwidth

333 MByte/s

Interface Frequency (SDR/DDR) (MHz)

- / 166

Interfaces

HYPERBUS

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

1.7 V to 2 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2037

Qualification

Industrial

Features

  • 45-nm MIRRORBIT technology, 2 bits/cell
  • Configurable sector architecture:
  • 256/512-byte page programming buffer
  • OTP secure silicon region (SSR) 1024 bytes
  • HYPERBUS and legacy SPI interfaces
  • DDR up to 400 MBps, SDR up to 21 MBps
  • Embedded ECC: single-bit correction,
  • Interface and data integrity CRC
  • SafeBoot and AutoBoot features
  • Advanced sector protection
  • Endurance Flex: high endurance/long retention
  • JEDEC xSPI (JESD251) compatibility

Description

  • High density and reliability for demanding
  • Flexible memory mapping for design freedom
  • Fast programming speeds boost throughput
  • Secure storage for sensitive data
  • Easy integration with multiple host
  • High data rates enable rapid data access
  • Enhanced data integrity and error resilience
  • Communication errors detected and corrected
  • Fast, reliable boot and recovery
  • Fine-grained memory protection options
  • Customizable endurance for varied needs
  • Industry-standard compatibility for broad use

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