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S28HL512TFPBHI013
  • S28HL512TFPBHI013

S28HL512TFPBHI013

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The S28HL512TFPBHI013 is a 512 Mb SEMPER™ NOR flash memory using Infineon's 45-nm MIRRORBIT™ technology. It features octal interface (JEDEC JESD251), up to 400 MBps DDR read rates at 200 MHz, and operates at 2.7 V to 3.6 V in a 24-ball BGA. The device meets AEC-Q100 Grade 1 for automotive and industrial use up to 125°C. Key features include ISO26262 ASIL B compliance, Endurance Flex, ECC, CRC, sector protection, AutoBoot, and hardware reset.

Infineon Technologies S28HL512TFPBHI013 Product Info

16 April 2026 0

Parameters

Density

512 MBit

Family

HL-T

Interface Bandwidth

333 MByte/s

Interface Frequency (SDR/DDR) (MHz)

- / 166

Interfaces

Octal

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2037

Qualification

Industrial

Features

  • 45-nm MIRRORBIT™ stores 2 bits/cell
  • Uniform and hybrid sector architectures
  • 256/512-byte page programming buffer
  • 1024-byte OTP secure silicon array
  • Octal interface, JEDEC JESD251 compliant
  • SDR up to 200 MBps, DDR up to 400 MBps
  • Data strobe (DS) for high-speed read
  • Functional safety ISO26262 ASIL B/D ready
  • Endurance Flex wear leveling architecture
  • Interface and data integrity CRC
  • Built-in ECC: corrects 1-bit, detects 2-bit
  • Legacy and advanced sector protection

Description

  • High density with 2 bits/cell saves board
  • Flexible sectoring for varied application
  • Large buffer boosts programming efficiency
  • OTP array enables secure key storage
  • Octal interface delivers fast data transfer
  • High-speed SDR/DDR supports demanding systems
  • DS simplifies high-speed system design
  • Functional safety for automotive/industrial
  • Wear leveling extends flash lifetime
  • CRC ensures reliable data transfer
  • ECC enhances data reliability and safety
  • Multi-level protection guards data and config

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