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S25FL512SDPBHVC13
  • S25FL512SDPBHVC13

S25FL512SDPBHVC13

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The S25FL512SDPBHVC13 is a 512 Mb (64 MB) SPI Multi-I/O NOR flash memory using Infineon's 65 nm MIRRORBIT™ technology and Eclipse™ architecture. It supports single, dual, and quad SPI modes, including DDR read commands, with read rates up to 80 MBps. Operating from 2.7 V to 3.6 V core and 1.65 V to 3.6 V I/O supply, it offers 100,000 program-erase cycles and 20-year data retention. AEC-Q100 automotive grades and advanced sector protection support secure storage.

Infineon Technologies S25FL512SDPBHVC13 Product Info

16 April 2026 0

Parameters

Density

512 MBit

Family

FL-S

Interface Bandwidth

66 MByte/s

Interface Frequency (SDR/DDR) (MHz)

133 / 66

Interfaces

Quad SPI

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • CMOS 3.0 V core with versatile I/O
  • SPI with multi I/O and DDR option
  • 32-bit extended addressing
  • Normal, Fast, Dual, Quad, DDR read
  • 512-byte page programming buffer
  • Automatic ECC with single bit correction
  • Uniform 256-KB sectors
  • 100,000 program-erase cycles min
  • 20-year data retention min
  • 1024-byte OTP secure region
  • Block and advanced sector protection
  • Core VCC: 2.7 V to 3.6 V, VIO: 1.65 V to

Description

  • Flexible 3.0 V operation simplifies design
  • High-speed SPI enables fast data access
  • Large address space supports big systems
  • Multiple read modes optimize performance
  • Fast programming boosts throughput
  • ECC ensures reliable data storage
  • Uniform sectors simplify erase operations
  • High endurance lowers maintenance cost
  • Long retention secures data for years
  • OTP region enhances system security
  • Robust protection prevents data loss
  • Wide voltage range fits varied platforms

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