0
S25FL512SAGBHMA13
  • S25FL512SAGBHMA13

S25FL512SAGBHMA13

Active and preferred

The S25FL512SAGBHMA13 is a 512 Mb (64 MB) SPI Multi-I/O NOR flash memory built on Infineon's 65 nm MIRRORBIT™ technology with Eclipse™ architecture for improved program and erase speeds. Supporting single, dual, and quad SPI including DDR modes, it achieves up to 80 MBps read rates.

Infineon Technologies S25FL512SAGBHMA13 Product Info

16 April 2026 0

Parameters

Classification

ISO 26262-ready

Density

512 MBit

Family

FL-S

Interface Bandwidth

52 MByte/s

Interface Frequency (SDR/DDR) (MHz)

133 / -

Interfaces

Quad SPI

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Automotive

Features

  • 3.0 V core with versatile I/O
  • SPI Multi-I/O: Single, Dual, Quad
  • DDR read commands for all I/O modes
  • 512-byte page programming buffer
  • Automatic ECC with single-bit correction
  • Uniform 256-KB sector erase
  • 100,000 program-erase cycles min
  • 20-year data retention min
  • 1024-byte OTP secure region
  • Advanced sector and block protection
  • Supply voltage: 2.7 V to 3.6 V
  • I/O voltage: 1.65 V to VCC + 200 mV

Description

  • Flexible interface for various host systems
  • Fast data transfer with DDR and Quad I/O
  • Large buffer enables quick programming
  • ECC ensures reliable data storage
  • Easy sector management for erase
  • High endurance for frequent updates
  • Long-term data reliability
  • Secure OTP for device authentication
  • Robust protection against accidental writes
  • Wide supply range supports many designs
  • Data integrity with error reporting
  • Compatible with prior SPI flash families

Subscribe to Welllinkchips !
Your Name
* Email
Submit a request