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S25FL127SABBHBC03
  • S25FL127SABBHBC03

S25FL127SABBHBC03

The S25FL127SABBHBC03 is a 128 Mb (16 MB) SPI NOR flash memory using 65 nm MIRRORBIT™ technology and Eclipse architecture for fast program and erase. Supporting single, dual, and quad SPI I/O up to 108 MHz, it achieves up to 54 MBps read speed in Quad mode. Operating from 2.7 V to 3.6 V, it features flexible sector architectures, 100,000 program-erase cycles per sector, and 20-year data retention.

Infineon Technologies S25FL127SABBHBC03 Product Info

16 April 2026 0

Parameters

Classification

ISO 26262-ready

Density

128 MBit

Family

FL-S

Interface Bandwidth

54 MByte/s

Interface Frequency (SDR/DDR) (MHz)

108 / -

Interfaces

Quad SPI

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Qualification

Automotive

Features

  • CMOS 3.0 V core
  • 128 Mb (16 MB) density
  • SPI with multi-I/O support
  • 24- or 32-bit address options
  • Read commands: Normal, Fast, Dual, Quad
  • AutoBoot for automatic read on power-up/reset
  • 256- or 512-byte page programming buffer
  • Internal ECC with single bit error correction
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles per sector
  • 20 year data retention
  • 1024-byte one-time programmable (OTP) array

Description

  • Low voltage operation reduces power use
  • High density enables large code/data storage
  • Flexible SPI I/O boosts system compatibility
  • Extended addressing supports large designs
  • Multiple read modes optimize speed
  • AutoBoot accelerates system startup
  • Large buffers speed up programming
  • ECC improves data reliability
  • Flexible erase options fit various needs
  • High endurance lowers maintenance cost
  • Long retention ensures data safety
  • OTP region adds secure storage

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