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IMBG40R036M2H
  • IMBG40R036M2H

IMBG40R036M2H

Active and preferred

Infineon Technologies IMBG40R036M2H Product Info

16 April 2026 0

Parameters

ID (@25°C) max

50 A

Mounting

SMT

Operating Temperature range

-55 °C to 175 °C

Package

PG-TO263-7

Polarity

N

Qualification

Industrial

RDS (on) (@ Tj = 25°C) max

46.8 mΩ

RDS (on) (@ Tj = 25°C)

36 mΩ

RthJC max

0.9 K/W

Technology

CoolSiC™ G2

VDS max

400 V

Apps

Server power supply units (PSU), Audio amplifier solutions, Renewables, Battery management systems (BMS), Motor control

Features

  • Better FOMs compared to 650 V SiC MOSFETs
  • Fast commutation robust diode with low Qfr
  • Low RDS(on) temperature dependency
  • Gate threshold voltage, VGS(th) = 4.5 V
  • Support for unipolar driving (VGSoff=0)
  • 100% avalanche tested
  • High controllability of switching speed
  • Low overshoot during high dV/dt operation
  • .XT interconnection technology
  • Best-in-class thermal performance

Description

  • High system efficiency
  • High power density designs
  • High design robustness
  • Reduced EMI filtering
  • Use in hard-switching topologies

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