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ISZ810P06LM
  • ISZ810P06LM

ISZ810P06LM

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OptiMOS™ P-channel MOSFETs 60 V in PQFN 3.3x3.3 package, targeted for battery management, load switch and reverse polarity protection applications, reducing design complexity in medium and low power applications. They offer easy interface to MCU, fast switching as well as avalanche ruggedness, suitable for high quality demanding applications. Available in logic level featuring a wide RDS(on) range and improves efficiency at low loads.

Infineon Technologies ISZ810P06LM Product Info

16 April 2026 0

Parameters

ID (@25°C) max

-19.5 A

IDpuls max

-78 A

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 3.3 x 3.3 FL

Polarity

P

Ptot max

83 W

QG (typ @10V)

-32.2 nC

QG (typ @4.5V)

-16 nC

RDS (on) (@10V) max

81 mΩ

RDS (on) (@4.5V) max

105 mΩ

VDS max

-60 V

VGS(th) range

-1 V to -2 V

Features

  • Available in 6 different packages
  • Wide RDS(on)range
  • Normal level & logic level availability
  • Optimized for a wide range applications
  • Availability from distribution partners

Description

  • Industry standard package
  • Ideal for high & low switching frequency
  • Avalanche ruggedness
  • Easy interface to MCU
  • Efficient at low loads,low Qf
  • Reduced design complexity
  • Energy efficiency

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