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ISZ157N08NM6
  • ISZ157N08NM6

ISZ157N08NM6

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OptiMOS™ 6 80 V - the latest power MOSFET technology setting the new industry benchmark performance with a wide portfolio offering. Compared to the latest OptiMOS™ 5 technology, Infineon's leading thin wafer technology enables significant performance improvement, including >28% lower RDS(on) and ~40% improved FOMs in PQFN 3.3x3.3. The performance improvement enables easier thermal design and less paralleling, leading to higher system efficiency, higher power density and system cost reduction. Infineon’s OptiMOS™ 6 80 V family is ideal for high switching frequency applications such as telecom, server and solar, and thanks to the performance improvement OptiMOS™ 6 80 V can be used also in battery powered applications as well as in battery management systems (BMS).

Infineon Technologies ISZ157N08NM6 Product Info

16 April 2026 0

Parameters

ID (@25°C) max

37 A

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 3.3 x 3.3 Fused Lead

Polarity

N

QG (typ @10V)

8.3 nC

RDS (on) (@10V) max

15.7 mΩ

VDS max

80 V

VGS(th) range

2.4 V to 3.5 V

VGS(th)

3 V

Features

  • Benchmark performance
  • RDS(on) options for best cost/performance
  • Industry standard packages
  • Normal level gate drive
  • 175°C rated
  • Industrial qualification

Description

  • Lower conduction losses than OptiMOS™ 5
  • Lower switching losses than OptiMOS™ 5
  • Wide portfolio for flexible supply chain
  • False turn-on immunity
  • Improved power, SOA & avalanche current
  • Robust reliable performance

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