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S29GL01GS12DHIV20
  • S29GL01GS12DHIV20

S29GL01GS12DHIV20

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The S29GL01GS12DHIV20 is a 1 Gb (128 MB), 3.0 V parallel NOR flash memory built on 65 nm MIRRORBIT™ Eclipse technology. It supports random access times of 120 ns and page mode access down to 25 ns, with a 512-byte programming buffer for fast writes. Operating from 2.7 V to 3.6 V VCC and 1.65 V to VCC VIO, it withstands -40°C to +105°C. Advanced sector protection, internal ECC, and 100,000 program/erase cycles ensure reliability for embedded and automotive applications.

Infineon Technologies S29GL01GS12DHIV20 Product Info

16 April 2026 0

Parameters

Density

1 GBit

Family

GL-S

Initial Access Time

120 ns

Interface Frequency (SDR/DDR) (MHz)

NA

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Page Access Time

15 ns

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • 65 nm MIRRORBIT™ Eclipse technology
  • CMOS 3.0 V core with versatile I/O
  • Single supply for read/program/erase
  • Versatile I/O voltage range: 1.65 V to VCC
  • 16-bit data bus
  • Asynchronous 32-byte page read
  • 512-byte programming buffer
  • Internal hardware ECC with single bit
  • Uniform 128 KB sectors
  • Suspend/resume for program and erase
  • Advanced sector protection (ASP)
  • 1024-byte one time program (OTP) array

Description

  • High reliability with 65 nm process
  • Flexible I/O supports system integration
  • Easy power supply design
  • Supports wide I/O voltage range
  • Fast data transfers with 16-bit bus
  • Efficient page read for fast access
  • Fast programming with large buffer
  • ECC enhances data integrity
  • Simple sector management
  • Interruptible program/erase for flexibility
  • Robust data and sector protection
  • Secure OTP for permanent data

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