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ISZ028N03LF2S
  • ISZ028N03LF2S

ISZ028N03LF2S

Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 2.8 mOhm in a PQFN 3.3 x 3.3 package. This product addresses a broad range of applications from low- to high-switching frequency.Compared to the previous technology, the ISZ028N03LF2S achieves up to 40% RDS(on) improvement while having up to 60% FOM enhancement and excellent robustness.

Infineon Technologies ISZ028N03LF2S Product Info

16 April 2026 0

Parameters

ID (@25°C) max

128 A

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 3.3 x 3.3

Polarity

N

QG (typ @4.5V)

13 nC

QG (typ @10V)

27 nC

RDS (on) (@10V) max

2.8 mΩ

RDS (on) (@4.5V) max

4.8 mΩ

Special Features

Logic Level

VDS max

30 V

VGS(th) range

1.35 V to 2.35 V

VGS(th)

1.85 V

Apps

Consumer electronics, USB-C chargers and adapters, Multicopters and drones, Power tools, Cordless power tools and outdoor power equipment, Industrial motor drives and controls, Battery management systems (BMS), Power conversion

Features

  • General purpose products
  • Excellent robustness
  • Superior price/performance ratio
  • Broad availability at distributors
  • Standard packages and pin-out
  • High manufacturing & supply standards

Description

  • Addresses a wide range of applications
  • Reliable performance
  • High quality and competitive pricing
  • Convenient selection & purchasing
  • Ease of design-in
  • Simplified product services

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