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ISZ023N06LM6
  • ISZ023N06LM6

ISZ023N06LM6

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Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Infineon Technologies ISZ023N06LM6 Product Info

16 April 2026 0

Parameters

ID (@25°C) max

149 A

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 3.3 x 3.3 Fused Lead

Polarity

N

QG (typ @10V)

46 nC

QG (typ @4.5V)

22 nC

RDS (on) (@10V) max

2.3 mΩ

RDS (on) (@4.5V) max

2.9 mΩ

VDS max

60 V

VGS(th) range

1.1 V to 2.3 V

VGS(th)

1.7 V

Apps

General purpose motor drive, DC-DC power conversion

Features

  • High performance silicon technology
  • Soft-switching optimized
  • Normal level gate drive
  • 175°C rated
  • Industrial qualification

Description

  • Lower conduction losses than OptiMOS™ 5
  • Lower switching losses than OptiMOS™ 5
  • Improved performance efficiency
  • Superior power handling capability
  • Robust reliable performance

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