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ISP12DP06NM
  • ISP12DP06NM

ISP12DP06NM

Active and preferred

OptiMOS™ P-Channel MOSFET 60 V in SOT-223 package targeting battery management, load switch and reverse polarity protection applications, reducing design complexity in medium and low power applications. Easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. Available in normal level featuring a wide RDS(on) range and improves efficiency at low loads.

Infineon Technologies ISP12DP06NM Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.24

ID (@25°C) max

-2.8 A

IDpuls max

-11.2 A

Operating Temperature range

-55 °C to 150 °C

Package

SOT-223

Polarity

P

Ptot max

4.2 W

QG (typ @10V)

-20.2 nC

RDS (on) (@10V) max

125 mΩ

Special Features

Small Signal

VDS max

-60 V

VGS(th) range

-2.1 V to -4 V

Features

  • VDS = -60V
  • Wide RDS(on) range
  • Logic level availability

Description

  • Easy interface to MCU
  • Enhanced efficiency at low loads
  • Fast switching
  • Avalanche ruggedness

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