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CY14B104NA-BA45XE
  • CY14B104NA-BA45XE

CY14B104NA-BA45XE

CY14B104NA-BA45XE is a 4-Mbit (256K × 16) automotive nvSRAM that combines fast SRAM with QuantumTrap nonvolatile cells. It operates from 3.0 V to 3.6 V across −40°C to +125°C with 45 ns access time. Data is automatically stored on power-down via a 61 µF to 180 µF VCAP capacitor and recalled on power-up; it supports 100K nonvolatile STORE cycles and 1-year data retention for configuration data.

Infineon Technologies CY14B104NA-BA45XE Product Info

16 April 2026 0

Parameters

Density

4 MBit

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 125 °C

Operating Voltage (VCCQ) max

3.6 V

Operating Voltage range

2.7 V to 3.6 V

Organization (X x Y)

256Kb x 16

Peak Reflow Temp

260 °C

Qualification

Automotive(E)

Speed

45 ns

Features

  • 4-Mbit nvSRAM (256K × 16)
  • 16-bit bus with BHE/BLE bytes
  • 25 ns/45 ns asynchronous access
  • AutoStore on power-down via VCAP
  • STORE via HSB pin or software seq
  • RECALL on power-up or software seq
  • Parallel STORE/RECALL of all cells
  • VCAP capacitor 61–180 µF
  • HSB busy LOW during STORE/RECALL
  • SRAM R/W blocked during STORE/RECALL
  • Infinite SRAM read/write/RECALL
  • Up to 1,000K nonvolatile STORE ops

Description

  • SRAM speed with nonvolatile backup
  • AutoStore saves data at power loss
  • HSB/software control adds flexibility
  • Power-up RECALL restores state fast
  • Parallel store/recall cuts downtime
  • Byte enables reduce bus activity
  • Defined VCAP sizing eases design-in
  • HSB busy avoids data corruption
  • Blocks R/W during NVM updates
  • Infinite SRAM cycles avoid wear-out
  • High STORE endurance lowers service
  • Long retention keeps data after off

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