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IRFB4137
  • IRFB4137

IRFB4137

The IR MOSFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon Technologies IRFB4137 Product Info

16 April 2026 1

Parameters

Budgetary Price €/1k

1.46, 1.46

ID (@25°C) max

38 A

Mounting

THT

Operating Temperature range

-55 °C to 175 °C

Package

TO-220

Polarity

N

Ptot max

341 W

Qgd

26 nC

QG (typ @10V)

83 nC

RDS (on) (@10V) max

69 mΩ

RthJC max

0.44 K/W

Tj max

175 °C

VDS max

300 V

VGS(th) range

3 V to 5 V

VGS(th)

4 V

VGS max

20 V

Features

  • Industry standard through-hole power package
  • High-current rating
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100 kHz
  • Softer body-diode compared to previous silicon generation
  • Wide portfolio available

Description

  • Standard pinout allows for drop in replacement
  • High-current carrying capability package
  • Industry standard qualification level
  • High performance in low frequency applications
  • Increased power density
  • Provides designers flexibility in selecting the most optimal device for their application

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