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IRF1010N
  • IRF1010N

IRF1010N

Infineon Technologies IRF1010N Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.58

ID (@25°C) max

85 A

Mounting

THT

Operating Temperature range

-55 °C to 175 °C

Package

TO-220

Polarity

N

Ptot max

130 W

Qgd

27.3 nC

QG (typ @10V)

80 nC

RDS (on) (@10V) max

11 mΩ

RthJC max

1.2 K/W

Tj max

175 °C

VDS max

55 V

VGS(th) range

2 V to 4 V

VGS(th)

3 V

VGS max

20 V

Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100kHz
  • Industry standard through-hole power package
  • High-current rating

Description

  • Increased ruggedness
  • Wide availability from distribution partners
  • Industry standard qualification
  • High performance in low frequency applications
  • Standard pin-out allows for drop-in replacement
  • High current capability

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