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IR2181S
  • IR2181S

IR2181S

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EiceDRIVER™ 600 V high and low-side Gate Driver IC with typical 1.9 A source and 2.3 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs . Also available in 8 Lead PDIP, 14 Lead SOIC, and 14-Lead PDIP .For the new version with our SOI technology we recommend 2ED2181S06F , providing integrated bootstrap diode, better robustness and higher switching frequency

Infineon Technologies IR2181S Product Info

16 April 2026 0

Parameters

Channels

2

Configuration

High-side and low-side

Input Vcc range

10 V to 20 V

Isolation Type

Functional levelshift JI (Junction Isolated)

Output Current (Sink)

2.3 A

Output Current (Source)

1.9 A

Qualification

Industrial

Turn Off Propagation Delay

220 ns

Turn On Propagation Delay

180 ns

VBS UVLO (On)

8.9 V

VBS UVLO (Off)

8.2 V

VCC UVLO (On)

8.9 V

VCC UVLO (Off)

8.2 V

Voltage Class

600 V

Apps

Power tools, Home appliances, Power optimizer solutions for scalable PV systems, Robotics, Motor control

Features

  • Floating channel for bootstrap op.
  • Fully operational to +600 V
  • Tolerant to neg. transient volt.
  • dV/dt immune
  • Gate drive supply: 10 V to 20 V
  • Undervolt. lockout for both channel
  • 3.3 V & 5 V input logic compatible
  • Matched prop. delay for both chan.
  • Logic & power ground +/- 5 V offset
  • Lower di/dt gate driver
  • Output source current capabi. 1.4 A
  • Output sink current capabi. 1.8 A

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