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S70FS01GSDSBHM210
  • S70FS01GSDSBHM210

S70FS01GSDSBHM210

Active and preferred

The S70FS01GSDSBHM210 is a 1 Gb (128 MB) dual-die stack Flash memory using 65-nm MIRRORBIT™ technology and Eclipse architecture. Operating at 1.7 V to 2.0 V, it supports SPI Multi-I/O, 32-bit addressing, Quad and DDR read modes, and page programming up to 512 bytes. Sector options include hybrid and uniform configurations, with 100,000 program-erase cycles. AEC-Q100 automotive grades and ECC ensure reliability for embedded and automotive applications across -40°C to +125°C.

Infineon Technologies S70FS01GSDSBHM210 Product Info

16 April 2026 1

Parameters

Classification

ISO 26262-ready

Density

1 GBit

Family

FS-S

Interface Bandwidth

80 MByte/s

Interface Frequency (SDR/DDR) (MHz)

133 / 80

Interfaces

Quad SPI

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 125 °C

Operating Voltage range

1.7 V to 2 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Automotive

Features

  • SPI with multi-I/O support
  • DDR and QPI modes
  • Extended 24- or 32-bit addressing
  • Compatible command set with S25FL families
  • Fast read: up to 80 MBps (DDR Quad I/O)
  • Page programming buffer: 256 or 512 bytes
  • Program and erase suspend/resume
  • Internal ECC with single bit correction
  • Hybrid or uniform sector options
  • 100,000 program-erase cycles per sector
  • 20 year data retention (10K cycles)
  • Deep power down mode (0.006 mA)

Description

  • Flexible interface for system integration
  • High-speed data access up to 80 MBps
  • Large address support for big applications
  • Easy migration from S25FL SPI products
  • Efficient page program for faster writes
  • Suspend/resume enables real-time operation
  • ECC improves data reliability
  • Sector options fit various designs
  • Long endurance for frequent updates
  • Data retention ensures long-term storage
  • Ultra-low standby saves power
  • Secure OTP and advanced protection

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