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CYRS15B102Q-GGMB
  • CYRS15B102Q-GGMB

CYRS15B102Q-GGMB

Active and preferred

Our rad hard SPI F-RAM is one of the industry’s lowest power, non-volatile memory solutions that is Single Event Upset (SEU) immune and virtually unlimited endurance. Infineon’s instant non-volatile write technology and greater than 100-year data retention provides the highest reliability for space applications.NOTE: This part is superseded by 5962R1821601VXC

Infineon Technologies CYRS15B102Q-GGMB Product Info

16 April 2026 0

Parameters

Density

2 MBit

Device weight

648.9 mg

Family

F-RAM

Frequency

25 MHz

Interfaces

SPI

Lead Ball Finish

Au

Operating Temperature range

-55 °C to 125 °C

Operating Voltage range

2 V to 3.6 V

Organization (X x Y)

4Mb x 18

Peak Reflow Temp

260 °C

Planned to be available until at least

2033

Qualification

Military

Features

  • 2 Mb density
  • SPI interface operating up to 25 MHz
  • Instant non-volatile write technology
  • 10-trillon read/write cycle endurance
  • 120 years data retention at +85°C
  • Extremely low programming voltage (2V)
  • Low operating current (10 mA max)
  • –55°C to +125°C military temp grade
  • 16-pin ceramic SOP (CSOP)
  • DLAM QML-V qual 2Mb rad hard SPI F-RAM
  • Radiation performance

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