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IQD009N06NM5CGSC
  • IQD009N06NM5CGSC

IQD009N06NM5CGSC

Active and preferred

The power MOSFET IQD009N06NM5CGSC comes with a low RDS(on) of 0,9 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.

Infineon Technologies IQD009N06NM5CGSC Product Info

16 April 2026 0

Parameters

ID (@25°C) max

445 A

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 5x6 Source-Down

Polarity

N

QG (typ @10V)

120 nC

RDS (on) (@10V) max

0.9 mΩ

Special Features

Center-Gate Dual-Side Cooling

VDS max

60 V

VGS(th) range

2.1 V to 3.3 V

VGS(th)

2.8 V

Apps

Data center power solutions, Server power supply units (PSU), Automotive BMS, Telecommunications infrastructure, Power tools, Battery formation and testing, Low-voltage drives, Power conversion

Features

  • Cutting edge 60 V silicon technology
  • Outstanding FOMs
  • Improved thermal performance
  • Ultra-low parasitics
  • Maximized chip/package ratio
  • Center-Gate footprint
  • Industry-standard package

Description

  • Best switching performance
  • Minimized conduction losses
  • Fast switching
  • Reduced voltage overshoot
  • Increased maximum current capability
  • Less device paralleling required
  • Lowest RDS(on) on a 5x6 footprint
  • Easy thermal management

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