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IPDQ65R080CFD7A
  • IPDQ65R080CFD7A

IPDQ65R080CFD7A

Active and preferred

The 80mΩ IPDQ65R080CFD7A in QDPAK top side cooling SMD package is part of the automotive-qualified 650 V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. Top side cooling further supports increased power density, reduces parasitic source inductance and comes with Kelvin source pin and3.2 mm creepage distance.

Infineon Technologies IPDQ65R080CFD7A Product Info

16 April 2026 0

Parameters

ID (@25°C) max

36 A

ID max

36 A

IDpuls max

107 A

Mounting

SMT

Operating Temperature range

-55 °C to 150 °C

Package

Q-DPAK

Polarity

N

Ptot max

223 W

QG (typ @10V)

50 nC

QG

50 nC

Qualification

Automotive

RDS (on) (@ Tj = 25°C) max

80 mΩ

RDS (on) (@ Tj = 25°C)

66 mΩ

Special Features

Highest cosmic radiation robustness

Technology

CoolMOS™ CFD7A

VDS max

650 V

VGS(th) range

3.5 V to 4.5 V

VGS(th)

4 V

Apps

DC-DC converter high-voltage, On-board charging (OBC), AC-DC auxiliary power supplies

Features

  • AEC-Q101 qualified
  • For hard- and soft-switching topologies
  • Intrinsic fast body diode
  • Reduced parasitic source inductance
  • Kelvin source pin
  • High current capability
  • High power dissipation, Ptot 694 W/25°C
  • Creepage distance of 3.2 mm for HV

Description

  • Better utilization of PCB space
  • Highest reliability for automotive appl.
  • Optimized power loop
  • Decoupling of thermals from substrate
  • Enabling of higher power density designs
  • Scalable for use in PFC and DC-DC stage
  • Granular portfolio available

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