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IPD50N12S3L-15
  • IPD50N12S3L-15

IPD50N12S3L-15

Infineon Technologies IPD50N12S3L-15 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.65

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Germany

ID (@25°C) max

50 A

IDpuls max

200 A

Operating Temperature range

-55 °C to 175 °C

Package

DPAK (PG-TO252-3)

Polarity

N

Ptot max

100 W

QG (typ @10V)

44 nC

QG (typ @10V) max

57 nC

Qualification

Automotive

RDS (on) (@10V) max

15 mΩ

RthJC max

1.5 K/W

Technology

OptiMOS™T

VDS max

120 V

VGS(th)

1.7 V

VGS(th) min

1.2 V

VGS(th) max

2.4 V

Features

  • OptiMOS™ power MOSFET for automotive
  • N-channel-Enhancement mode
  • AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
  • PPAP Capable Device

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