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S26KL512SDABHM030
  • S26KL512SDABHM030

S26KL512SDABHM030

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The S26KL512SDABHM030 is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with 3.0 V-only supply and HYPERBUS™ DDR interface, delivering up to 200 MBps sustained read throughput at 166 MHz. It features 256-KB uniform sectors, 512-byte program buffer, ECC (1-bit correction), CRC, and AEC-Q100 Grade 1 qualification (–40°C to +125°C). With 100,000 program/erase cycles endurance and 20-year retention, it is ideal for automotive, industrial, and embedded storage.

Infineon Technologies S26KL512SDABHM030 Product Info

16 April 2026 0

Parameters

Bus Width

x8

Classification

ISO 26262-ready

Density

512 MBit

Family

KL-S

Initial Access Time

96 ns

Interface Bandwidth

200 MByte/s

Interface Frequency (SDR/DDR) (MHz)

- / 100

Interfaces

HYPERBUS

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 125 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Automotive

Technology

HYPERFLASH

Features

  • 8-bit data bus
  • HYPERBUS™ interface
  • Up to 333 MBps sustained read throughput
  • DDR: two data transfers per clock
  • 166 MHz clock rate at 1.8 V
  • 100 MHz clock rate at 3.0 V
  • 96 ns initial random read access time
  • Configurable burst lengths: 16/32/64 bytes
  • Low power modes: standby 25 µA, deep
  • ECC: 1-bit correction, 2-bit detection
  • Hardware CRC calculation
  • Secure silicon region (1024-byte OTP)

Description

  • Fast data access for high-performance systems
  • Flexible interface supports diverse designs
  • High-speed DDR improves throughput
  • Multiple burst lengths optimize transfers
  • Low power modes extend battery life
  • ECC ensures data integrity
  • CRC detects transmission errors
  • Secure region enables device authentication
  • Quick random access reduces latency
  • 8-bit bus simplifies integration
  • Configurable output drive for signal tuning
  • Reliable operation in harsh environments

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