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IPD50N03S4L-06
  • IPD50N03S4L-06

IPD50N03S4L-06

Active and preferred

Infineon Technologies IPD50N03S4L-06 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.25

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Austria, Malaysia

ID (@25°C) max

50 A

IDpuls max

200 A

Launch year

2008

Operating Temperature range

-55 °C to 175 °C

Package

DPAK (PG-TO252-3)

Planned to be available until at least

2032

Polarity

N

Ptot max

56 W

QG (typ @10V)

24 nC

QG (typ @10V) max

31 nC

Qualification

Automotive

RDS (on) (@10V) max

5.5 mΩ

RthJC max

2.7 K/W

Technology

OptiMOS™T2

VDS max

30 V

VGS(th) range

1 V to 2.2 V

VGS(th)

1.5 V

Apps

Chassis control & safety, Electronic stability control, DC-DC converter high-voltage

Features

  • N-channel - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green product (RoHS compliant)
  • 100% Avalanche tested
  • PPAP Capable Device

Description

  • Low switching and conduction losses
  • Highest thermal efficiency
  • Robust packages & superior quality
  • Optimized total gate charge
  • Smaller driver output stages

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