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IPD30N08S2-22
  • IPD30N08S2-22

IPD30N08S2-22

Active and preferred

Infineon Technologies IPD30N08S2-22 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.58

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Austria, Malaysia

ID (@25°C) max

30 A

IDpuls max

120 A

Launch year

2007

Operating Temperature range

-55 °C to 175 °C

Package

DPAK (PG-TO252-3)

Planned to be available until at least

2030

Polarity

N

Ptot max

125 W

QG (typ @10V)

44 nC

QG (typ @10V) max

57 nC

Qualification

Automotive

RDS (on) (@10V) max

21.5 mΩ

RthJC max

1.1 K/W

Technology

OptiMOS™

VDS max

75 V

VGS(th) range

2.1 V to 4 V

VGS(th)

3.1 V

Features

  • N-channel-Logic Level-Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green package (lead free)
  • Ultra low RDS(on)
  • 100% Avalanche tested
  • PPAP Capable Device

Description

  • Lowest RDS(on) at 75V in planar tech
  • Highest current capability
  • Lowest switching and conduction losses
  • Highest thermal efficiency
  • Robust packages & superior quality
  • Optimal total gate charge
  • Smaller drivers output stages

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