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IPD100N04S4L-02
  • IPD100N04S4L-02

IPD100N04S4L-02

Active and preferred

Infineon Technologies IPD100N04S4L-02 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.6

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Malaysia

ID (@25°C) max

100 A

Launch year

2015

Operating Temperature range

-55 °C to 175 °C

Package

DPAK (PG-TO252-3)

Planned to be available until at least

2032

Polarity

N

QG (typ @10V)

126 nC

QG (typ @10V) max

165 nC

Qualification

Automotive

RDS (on) (@10V) max

1.9 mΩ

Technology

OptiMOS™T2

VDS max

40 V

VGS(th) range

1.2 V to 2.2 V

VGS(th)

1.7 V

Apps

Domain controller for ADAS & autonomous driving, Automotive body electronics & power distribution, Automotive BMS

Features

  • OptiMOS™ power MOSFET
  • N-channel-Logic Level-Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green product (RoHS compliant)
  • 100% Avalanche tested
  • PPAP Capable Device

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