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S25FL256SDPMFV000
  • S25FL256SDPMFV000

S25FL256SDPMFV000

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The S25FL256SDPMFV000 is a 256 Mb (32 MB) SPI NOR flash memory using Infineon's 65-nm MIRRORBIT™ technology and Eclipse architecture for fast program and erase. Supporting single, dual, and quad SPI I/O including DDR modes, it achieves up to 80 MBps read speed at 3.0 V. With a 2.7 V to 3.6 V core and 1.65 V to 3.6 V I/O, it offers 20-year data retention and 100,000-cycle endurance.

Infineon Technologies S25FL256SDPMFV000 Product Info

16 April 2026 0

Parameters

Density

256 MBit

Family

FL-S

Interface Bandwidth

66 MByte/s

Interface Frequency (SDR/DDR) (MHz)

133 / 66

Interfaces

Quad SPI

Lead Ball Finish

Matte Tin Plating

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • MIRRORBIT™ technology stores 2 bits per cell
  • Eclipse architecture for fast program/erase
  • SPI Multi-I/O: x1, x2, x4 data width support
  • DDR read commands for higher throughput
  • 256B/512B page programming buffer
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles minimum
  • 20-year data retention minimum
  • 1024-byte One-Time Programmable (OTP) area
  • Advanced sector protection (ASP)
  • Versatile I/O voltage range: 1.65 V to VCC
  • Operating temp: –40°C to +125°C

Description

  • High density, low-cost storage solution
  • Fast read/write boosts system performance
  • Flexible interface fits many host controllers
  • DDR/QIO enables high-speed data access
  • Large buffer improves programming efficiency
  • Multiple erase options ease migration
  • Reliable for frequent updates and code
  • Long retention ensures data integrity
  • OTP secures device identity and config
  • Sector protection prevents unwanted changes
  • Wide voltage range supports diverse systems
  • Broad temp range fits harsh environments

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