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IPB110N20N3LF
  • IPB110N20N3LF

IPB110N20N3LF

OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.

Infineon Technologies IPB110N20N3LF Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

2.95

ID (@25°C) max

88 A

IDpuls max

352 A

Mounting

SMD

Operating Temperature range

-55 °C to 150 °C

Package

D2PAK (TO-263)

Pin Count

3 Pins

Polarity

N

Ptot max

250 W

Qgd

51 nC

QG (typ @10V)

76 nC

RDS (on) (@10V) max

11 mΩ

RthJA max

62 K/W

RthJC max

0.5 K/W

Rth

0.3 K/W

Special Features

Wide SOA

VDS max

200 V

VGS(th) range

2.2 V to 4.2 V

VGS(th)

3.2 V

Apps

Space applications, Battery energy storage (BESS)

Features

  • R DS(on) and wide (SOA)
  • High max. pulse current
  • High continuous pulse current

Description

  • Rugged linear mode operation
  • Low conduction losses
  • Faster start-up with higher in-rush

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