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IPB049N08N5
  • IPB049N08N5

IPB049N08N5

Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB049N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar , low voltage drives and adapters .

Infineon Technologies IPB049N08N5 Product Info

16 April 2026 0

Parameters

Battery voltage

36-48 V

Budgetary Price €/1k

0.76

Ciss

2900 pF

Coss

490 pF

ID (@25°C) max

80 A

IDpuls max

320 A

Mounting

SMD

Operating Temperature range

-55 °C to 175 °C

Package

D2PAK (TO-263)

Pin Count

3 Pins

Polarity

N

Ptot max

125 W

QG (typ @10V)

42 nC

RDS (on) (@10V) max

4.9 mΩ

RthJA max

62 K/W

RthJC max

1.2 K/W

Rth

1.2 K/W

VDS max

80 V

VGS(th) range

2.2 V to 3.8 V

VGS(th)

3 V

Features

  • Optimized for synchronous rectification
  • Ideal for high switching frequency
  • Capacitance reduction of up to 44%
  • 43% lower Rds(on) vs. previous gen

Description

  • Highest system efficiency
  • Reduced switching and conduction losses
  • Less paralleling required
  • Increased power density
  • Low voltage overshoot

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