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IPB011N04NF2S
  • IPB011N04NF2S

IPB011N04NF2S

Infineon's StrongIRFET™ 2 power MOSFET 40 V features lowest RDS(on) of 1.15 mOhm, addressing a broad range of applications from low- to high-switching frequency.

Infineon Technologies IPB011N04NF2S Product Info

16 April 2026 0

Parameters

ID max

201 A

ID (@25°C) max

201 A

IDpuls max

804 A

Mounting

SMD

Operating Temperature range

-55 °C to 175 °C

Package

D2PAK (TO-263)

Polarity

N

Ptot max

375 W

QG (typ @10V)

210 nC

RDS (on) (@10V) max

1.15 mΩ

RDS (on) max

1.15 mΩ

VDS max

40 V

VGS(th) range

2.1 V to 3.4 V

VGS(th)

2.8 V

Features

  • Broad availability distribution partners
  • Excellent price/performance ratio
  • Ideal for high & low switching frequency
  • Standard through-hole package footprint
  • High current rating
  • Capable of wave-soldering

Description

  • Multi-vendor compatibility
  • Right-fit products
  • Supports a wide variety of applications
  • Standard pinout for drop-in replacement
  • Increased current carrying capability
  • Ease of manufacturing

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