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IMZA65R107M1H
  • IMZA65R107M1H

IMZA65R107M1H

CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device’s performance, robustness, and ease of use. This 650V CoolSiC™ is built on a state-of-the-art trench MOSFET, optimized to allow no compromises in getting both the lowest switching losses for given on-state resistance in the application and the highest reliability in operation.

Infineon Technologies IMZA65R107M1H Product Info

16 April 2026 0

Parameters

ID (@25°C) max

48 A

Mounting

THT

Operating Temperature range

-55 °C to 175 °C

Package

TO247 4-pin (asymmetric leads)

Pin Count

4 Pins

Polarity

N

Ptot max

75 W

Qualification

Industrial

RDS (on) (@ Tj = 25°C) max

142 mΩ

RDS (on) (@ Tj = 25°C)

108 mΩ

Technology

CoolSiC™ G1

VDS max

650 V

Apps

Light electric vehicle solutions, Complete system solutions for smart TVs

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