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IMZC140R029M2H
  • IMZC140R029M2H

IMZC140R029M2H

Active and preferred

CoolSiC™ MOSFET discrete 1400 V, 29 mΩ G2 in TO-247 4pin combines cutting-edge SiC technology with robust high-creepage package. It enables designs with bus voltages beyond 1000 V. For existing applications, it offers both additional voltage margin and enhanced reliability. Furthermore, it allows increased switching speed leading to higher efficiency. Pin-to-pin compatible, it is suitable for PV, EV charging, and other industrial applications

Infineon Technologies IMZC140R029M2H Product Info

16 April 2026 1

Parameters

Ciss

1960 pF

Coss

67 pF

ID

65 A

Mounting

THT

Operating Temperature range

-55 °C to 175 °C

Package

TO-247-4 high creepage

Pin Count

4 Pins

Polarity

N

Ptot

288 W

Qgd

14 nC

QG

54 nC

Qualification

Industrial

RDS (on) (@ Tj = 25°C)

29 mΩ

RthJA max

62 K/W

RthJC max

0.52 K/W

Technology

CoolSiC™ G2

VDS max

1400 V

Apps

Battery energy storage (BESS), EV charging, Photovoltaic, Uninterruptible power supplies (UPS)

Features

  • VDSS = 1400 V at Tvj = 25°C
  • RDSon = 11 mΩ at VGS = 18 V, Tvj = 25°C
  • Very low switching losses for efficiency
  • Short circuit withstand time of 2 µs
  • Wider max VGS range from -10 V to +25 V
  • Benchmark gate threshold voltage 4.2 V
  • Robustness against parasitic turn-on
  • Robust body diode
  • .XT interconnection technology 
  • Tighter VGS(th) parameter distribution 
  • High creepage TO-247 4pin package

Description

  • Higher power density 
  • Improved overall system efficiency 
  • Increased system output power 
  • Enhanced cooling optimization 
  • Ease of system design 
  • Robustness against transient overloads 
  • Robustness against avalanche conditions 
  • Robustness against Miller effect 
  • Ease of paralleling 
  • Very reliable package with high creepage

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