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IPI70N04S4-06
  • IPI70N04S4-06

IPI70N04S4-06

Infineon Technologies IPI70N04S4-06 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.54

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Germany, Malaysia

ID (@25°C) max

70 A

IDpuls max

280 A

Operating Temperature range

-55 °C to 175 °C

Package

I2PAK (PG-TO262-3)

Polarity

N

Ptot max

58 W

QG (typ @10V) max

32 nC

QG (typ @10V)

24.5 nC

Qualification

Automotive

RDS (on) (@10V) max

6.2 mΩ

RthJC max

2.6 K/W

Technology

OptiMOS™T2

VDS max

40 V

VGS(th) range

2 V to 4 V

VGS(th)

3 V

Features

  • N-channel - Enhancement mode
  • AEC qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
  • PPAP Capable Device

Description

  • Highest current capability
  • Lowest switching and conduction losses
  • Highest thermal efficiency
  • Robust packages & superior quality
  • Optimized total gate charge
  • Smaller driver output stages

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