IMZA120R020M1H

CoolSiC™ MOSFET discrete 1200 V, 20 mΩ G1 in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. The SiC MOSFET offers the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.

Infineon Technologies IMZA120R020M1H Product Info

16 April 2026 0

Parameters

Ciss	3460 pF
Coss	159 pF
ID (@25°C) max	98 A
Mounting	THT
Operating Temperature range	-55 °C to 175 °C
Package	TO-247-4
Pin Count	4 Pins
Polarity	N
Ptot (@ TA=25°C) max	375 W
Qgd	24 nC
QG	83 nC
Qualification	Industrial
RDS (on) (@ Tj = 25°C)	20 mΩ
RthJA max	62 K/W
RthJC max	0.4 K/W
Technology	CoolSiC™ G1
Tj max	175 °C
VDS max	1200 V

Apps

Fuel-cell control unit (FCCU), Battery formation and testing, Battery energy storage (BESS), EV charging, DIN rail power supply solutions, Photovoltaic, Motor control, Uninterruptible power supplies (UPS)

Features

Best in class switching losses
Best in class conduction losses
Benchmark gate threshold voltage
V_th > 4 V
0V turn-off gate voltage applicable
Wide gate-source voltage range
Robust diode for hard commutation
Temp. ind. turnoff switching losses
.XT interconnection technology

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ELECTRONIC COMPONENTS
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IMZA120R020M1H

Infineon Technologies IMZA120R020M1H Product Info

Parameters

Apps

Features

SUBMITTED SUCCESSFULLY！

ELECTRONIC COMPONENTS All In One Distributor

IMZA120R020M1H

Infineon Technologies IMZA120R020M1H Product Info

Parameters

Apps

Features

SUBMITTED SUCCESSFULLY！

ELECTRONIC COMPONENTS
All In One Distributor