IMW65R075M2H

Active and preferred

The CoolSiC™ MOSFET 650 V G2 is the trending option to leverage a very performing technology, like the CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.

Infineon Technologies IMW65R075M2H Product Info

16 April 2026 0

Parameters

ID (@25°C) max	26.6 A
Mounting	THT
Operating Temperature range	-55 °C to 175 °C
Package	TO247
Polarity	N
Qualification	Industrial
RDS (on) (@ Tj = 25°C) max	95 mΩ
RDS (on) (@ Tj = 25°C)	75 mΩ
RthJC max	1.35 K/W
Technology	CoolSiC™ G2
VDS max	650 V

Apps

Complete system solutions for smart TVs, Battery energy storage (BESS), Industrial motor drives and controls, Microinverter solutions, Power conversion

Features

Excellent figures of merit (FOMs)
Best in class RDS(on)
Outstanding robustness
Flexible driving voltage range
Improved package interconnect with .XT
Tj,max=175°C
Kelvin pin

Description

Enables BOM savings
Maximizes the system performance per $
Highest reliability and longer lifetime
Enables top efficiency and power density
Small footprint to more power density
Most compact daughter card design
Fully leverages SiC in a small footprint

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IMW65R075M2H

Infineon Technologies IMW65R075M2H Product Info

Parameters

Apps

Features

Description

SUBMITTED SUCCESSFULLY！

ELECTRONIC COMPONENTS All In One Distributor

IMW65R075M2H

Infineon Technologies IMW65R075M2H Product Info

Parameters

Apps

Features

Description

SUBMITTED SUCCESSFULLY！

ELECTRONIC COMPONENTS
All In One Distributor