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ISZ080N10NM6
  • ISZ080N10NM6

ISZ080N10NM6

Active and preferred

ISZ080N10NM6 OptiMOS™ 6 100 V in normal level is setting new technology standards in power MOSFETs. Compared to alternative products, Infineon’s leading thin wafer technology is enabling significant performance benefits. OptiMOS™ 6 industrial power MOSFET 100 V is designed for high switching frequency application such as telecom and server power supply, but also the ideal choice for other applications such as solar, power tools and drones.

Infineon Technologies ISZ080N10NM6 Product Info

16 April 2026 1

Parameters

Budgetary Price €/1k

0.57

ID max

75 A

ID (@25°C) max

75 A

IDpuls max

300 A

Mounting

SMT

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 3.3 x 3.3 Fused Lead

Pin Count

8 Pins

Polarity

N

Ptot max

100 W

QG (typ @10V)

19 nC

QG

19 nC

RDS (on) max

8.04 mΩ

RDS (on) (@10V) max

8.04 mΩ

VDS max

100 V

VGS(th) range

2.3 V to 3.3 V

VGS(th)

2.8 V

Apps

Medium voltage IBC (48 V), Cobots

Features

  • Achieves:~20% lower RDS(on)
  • 30% FOMg&40% FOMgd
  • Low & soft reverse recovery charge
  • Ideal for high switching frequency
  • MSL 1 classified according to J-STD-020
  • 175 °C junction temperature rating
  • High avalanche energy rating
  • Pb-free lead plating
  • RoHS compliant

Description

  • Low conduction losses
  • Low switching losses
  • Fast turn on and off
  • Less paralleling required
  • Robust reliable performance
  • Environmentally friendly
  • Less paralleling required

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