Product
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IMW120R090M1H
  • IMW120R090M1H

IMW120R090M1H

CoolSiC™ MOSFET discrete 1200 V, 90 mΩ G1 in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. The SiC MOSFET offers the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.

Infineon Technologies IMW120R090M1H Product Info

16 April 2026 0

Parameters

Ciss

707 pF

Coss

39 pF

ID (@25°C) max

26 A

Mounting

THT

Operating Temperature range

-55 °C to 175 °C

Package

TO-247-3

Pin Count

3 Pins

Polarity

N

Ptot (@25°C) max

115 W

Qgd

5 nC

QG (typ @18V)

21 nC

Qualification

Industrial

RDS (on) (@18V)

90 mΩ

RDS (on) (@ Tj = 25°C)

90 mΩ

RthJA max

62 K/W

RthJC max

1.3 K/W

Technology

CoolSiC™ G1

Tj max

175 °C

VDS max

1200 V

Apps

EV charging, DIN rail power supply solutions, Photovoltaic, 1-phase string inverter solutions, Uninterruptible power supplies (UPS)

Features

  • Best in class switching losses
  • Best in class conduction losses
  • Benchmark high threshold voltage
  • Vth > 4 V
  • 0V turn-off gate voltage for easy
  • Simple gate drive
  • Wide gate-source voltage range
  • Robust and low loss body diode
  • Rated for hard commutation
  • Temp. ind. turnoff switching losses

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